The dislocation and stacking fault densities and disordered layers in SiC reflect the growth condition and determine the polytype stucture. Stacking faults form for growth temperatures of 2000-2600K. Twinning and slip dislocations form at 1300-2200K. The vacancy formation energy is 2.3 eV at 1000-1500K and 5eV at 2500K. Relations between the polytypes and the defect structure are given.
G. Suchaneck, Yu.M. Tairov and V.F. Tsvetkov: Evaluation of the major electrophysical parameters of silicon carbide-Group III nitride solid solutions, Pisma v ZhTF 9(12) (1983) 737-741 (Chemical abstracts 99:62453c)
The miscibility gaps, nonlinear optical susceptibilities, and band gaps of SiC-AlN and SiC-GaN solid solutions were determined.
G.K. Safaraliev, G.K. Suchaneck, Yu.M. Tairov and V.F. Tsvetkov: Formation criteria of solid solutions based on silicon carbide, Isv. Akad. Nauk SSSR, Neorg. Mater. 22(11) (1986) 1839-1841 (Chemical abstracts 106:91057v)
Criteria for SiC-based solid solution formation were developed from correlation between maximal impurity solubility and electronegativity and also between semi-empirical orbital radii of elements in the solid solutions. Experiments showed existence of (SiC)1-x-(AlN)x where 0.04 < x < 0.95. The 2H polytype crystallizes at 0.2 < x < 0.95.
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